- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366572 > APT6033BN (Advanced Power Technology Ltd.) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS PDF資料下載
參數(shù)資料
| 型號： | APT6033BN |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| 中文描述： | N溝道增強型高壓功率MOSFET |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | APT6033BN |
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
G
,
I
D
,
I
D
,
C
TO-247AD Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
Gate
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2-Plcs.
3.55 (.140)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Dimensions in Millimeters and (Inches)
D
0
1
5
10
50 100
5001000
0
10
20
30
40
50
0
40
80
120
160
200
0
0.5
1.0
1.5
2.0
2.5
3.0
APT6030/6033BN
TC =+25
°
C
TJ =+150
°
C
SINGLE PULSE
100
10
1
.1
20
16
12
8
4
0
10,000
5,000
1,000
500
100
200
100
50
20
10
5
2
1
Ciss
VDS=300V
VDS=120V
VDS=480V
TJ =+150
°
C
TJ =+25
°
C
Crss
Coss
10
μ
S
100
μ
S
1mS
10mS
100mS
DC
APT6030BN
APT6033BN
APT6030BN
APT6033BN
OPERATION HERE
LIMITED BY R
DS
(ON)
I
D
= I
D
[Cont.]
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT6035AVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6035BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT6035BVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6035 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6035SVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT6033BNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 23A I(D) | TO-247AD |
| APT6035 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT6035AVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6035BN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT6035BNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 19A I(D) | TO-247AD |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。