參數(shù)資料
型號(hào)： APT6021BFLL
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 29 A, 600 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： TO-247, 3 PIN
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 168K
代理商： APT6021BFLL
DYNAMIC CHARACTERISTICS
APT6021BFLL_SFLL
050-7068
Rev
C
9-2004
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -29A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -29A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -29A, di/dt = 100A/s)
Peak Recovery Current
(IS = -29A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
29
116
1.3
15
Tj = 25°C
250
Tj = 125°C
525
Tj = 25°C
1.5
Tj = 125°C
5.5
Tj = 25°C
13
Tj = 125°C
23
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.31
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 300V
I
D = 29A @ 25°C
RESISTIVESWITCHING
V
GS = 15V
V
DD = 300V
I
D = 29A @ 25°C
R
G = 1.6
INDUCTIVE SWITCHING @ 25°C
V
DD = 400V, VGS = 15V
I
D = 29A, RG = 5
INDUCTIVE SWITCHING @ 125°C
V
DD = 400V, VGS = 15V
I
D = 29A, RG = 5
MIN
TYP
MAX
3470
635
50
80
20
44
10
7
25
4
325
205
500
250
UNIT
pF
nC
ns
J
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 3.09mH, RG = 25, Peak IL = 29A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ -ID29A
di/dt ≤ 700A/s V
R ≤ VDSS
T
J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
相關(guān)PDF資料
PDF描述
APT6021SFLL 29 A, 600 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET
APT6021BFLL 29 A, 600 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT6032AVR 17.5 A, 600 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
APT6033BNR-BUTT 22 A, 600 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT6021BFLL_04 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT6021BFLLG 功能描述:MOSFET N-CH 600V 29A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT6021BLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT6021BLL_04 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT6021BLLG 功能描述:MOSFET N-CH 600V 29A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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