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參數(shù)資料
| 型號(hào)： | APT6013B2LLG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 43 A, 600 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TMAX-3 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 202K |
| 代理商： | APT6013B2LLG |
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
APT6013B2LL_LLL
050-7053
Rev
C
9-2004
1
10
100
600
0
10
20
30
40
50
0
40
80
120
160
200
0.3
0.5
0.7
0.9
1.1
1.3
1.5
172
100
10
1
16
12
8
4
0
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
Crss
Ciss
Coss
VDS=300V
VDS=120V
VDS=480V
10mS
1mS
100S
TJ =+150°C
TJ =+25°C
20,000
10,000
1,000
100
10
200
100
10
1
I
D = 43A
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 400V
R
G = 5
T
J = 125°C
L = 100H
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
E
on
and
E
off
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t rand
t
f
(ns)
10
20
30
40
50
60
70
10
20
30
40
50
60
70
10
20
30
40
50
60
70
0
5
10 15 20 25 30
35 40 45 50
V
DD = 400V
R
G = 5
T
J = 125°C
L = 100H
V
DD = 400V
R
G = 5
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery
V
DD = 400V
I
D = 43A
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery
120
100
80
60
40
20
0
3000
2500
2000
1500
1000
500
0
100
80
60
40
20
0
2000
1600
1200
800
400
0
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| APT6013LLL | 43 A, 600 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT6013B2LL | 43 A, 600 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6013B2LL | 43 A, 600 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT6013JFLL | 功能描述:MOSFET N-CH 600V 39A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
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| APT6013JLL | 功能描述:MOSFET N-CH 600V 39A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT6013JLL_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT6013JVR | 功能描述:MOSFET N-CH 600V 40A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
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