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參數(shù)資料
| 型號： | APT50M85LVR |
| 元件分類： | JFETs |
| 英文描述： | 56 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 139K |
| 代理商： | APT50M85LVR |
APT50M85B2VR_LVR
050-5913
Rev
A
5-2004
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
Drain
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
T-MAXTM (B2) Package Outline (B2VR)
TO-264 (L) Package Outline (LVR)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
500
0
10
20
30
40
50
0
100
200
300
400
500
600
0.3
0.5
0.7
0.9
1.1
1.3
1.5
224
100
50
10
5
1
16
12
8
4
0
10mS
1mS
100S
TC=+25°C
TJ=+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
TJ=+150°C
TJ=+25°C
Crss
Ciss
Coss
30,000
10,000
1,000
100
200
100
10
1
VDS=250V
VDS=100V
VDS=400V
I
D = 56A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT50M85LVRG | 56 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT50M85B2VR | 56 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50N60JCU2 | 52 A, 600 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5545BN-GULLWING | 17 A, 550 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT6040BN-GULLWING | 18 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50M85LVRG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS5 - Rail/Tube |
| APT50MC120JCU2 | 制造商:Microsemi Corporation 功能描述:1200 V 34 mOhm 179 nC Boost chopper SiC MOSFET 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE DIODE |
| APT50N60JCCU2 | 功能描述:MOSFET N-CH 600V 50A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APT50N60JCU2 | 功能描述:MOSFET N-CH 600V 52A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APT51F50J | 功能描述:MOSFET N-CH 500V 51A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
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