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參數資料
| 型號： | APT50M85LVFRG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 56 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁數： | 4/4頁 |
| 文件大?。?/td> | 141K |
| 代理商： | APT50M85LVFRG |
050-5914
Rev
A
5-2004
APT50M85B2VFR_LVFR
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
500
0
10
20
30
40
50
0
100
200
300
400
500
600
0.3
0.5
0.7
0.9
1.1
1.3
1.5
224
100
50
10
5
1
16
12
8
4
0
10mS
1mS
100S
TC=+25°C
TJ=+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
TJ=+150°C
TJ=+25°C
Crss
Ciss
Coss
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
Drain
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
T-MAXTM (B2) Package Outline (B2VFR)
TO-264 (L) Package Outline (LVFR)
30,000
10,000
1,000
100
200
100
10
1
VDS=250V
VDS=100V
VDS=400V
I
D = 56A
相關PDF資料 |
PDF描述 |
|---|---|
| APT50M85B2VFR | 56 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M85LVR | 56 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT50M85B2VR | 56 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M85B2VRG | 56 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M85LVR | 56 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT50M85LVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT50M85LVRG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS5 - Rail/Tube |
| APT50MC120JCU2 | 制造商:Microsemi Corporation 功能描述:1200 V 34 mOhm 179 nC Boost chopper SiC MOSFET 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE DIODE |
| APT50N60JCCU2 | 功能描述:MOSFET N-CH 600V 50A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APT50N60JCU2 | 功能描述:MOSFET N-CH 600V 52A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
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