參數(shù)資料
型號(hào)： APT50M65JFLL
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 58 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOTOP-4
文件頁數(shù)： 5/5頁
文件大小： 102K
代理商： APT50M65JFLL
050-7032
Rev
D
12-2003
Typical Performance Curves
APT50M65JFLL
SOT-227 (ISOTOP) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
ISOTOPis a Registered Trademark of SGS Thomson.
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
Drain Current
Gate Voltage
Drain Voltage
90%
T
J
= 125 C
90%
t
d(off)
10%
t
f
0
Switching Energy
T
J
= 125 C
10 %
t
d(on)
Drain Current
Drain Voltage
Gate Voltage
5 %
90%
10 %
t
r
Switching Energy
IC
D.U.T.
APT60DF60
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
相關(guān)PDF資料
PDF描述
APT50M65JFLL 58 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET
APT50M65LLL 67 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT50M65LLL 67 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT50M65LLLG 67 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT50M65B2LL 67 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT50M65JFLL_03 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R FREDFET
APT50M65JLL 功能描述:MOSFET N-CH 500V 58A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:*
APT50M65JLL_03 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R MOSFET
APT50M65LFLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R FREDFET
APT50M65LFLLG 功能描述:MOSFET N-CH 500V 67A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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