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參數(shù)資料
| 型號(hào)： | APT50M65B2LL |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 67 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TMAX-3 |
| 文件頁(yè)數(shù)： | 5/5頁(yè) |
| 文件大?。?/td> | 100K |
| 代理商： | APT50M65B2LL |
050-7012
Rev
D
12-2003
Typical Performance Curves
APT50M65B2LL - LLL
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
Drain
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
T-MAX (B2) Package Outline
TO-264 (L) Package Outline
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
Drain Current
Gate Voltage
Drain Voltage
90%
T
J
= 125 C
90%
t
d(off)
10%
t
f
0
Switching Energy
T
J
= 125 C
10 %
t
d(on)
Drain Current
Drain Voltage
Gate Voltage
5 %
90%
10 %
t
r
Switching Energy
IC
D.U.T.
APT60DF60
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
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PDF描述 |
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| APT50M75B2LL | 57 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M75LLL | 57 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT50M75LLL | 57 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT50M75B2LL | 57 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M75LLLG | 57 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50M65B2LL_04 | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:POWER MOS 7 R MOSFET |
| APT50M65B2LLG | 功能描述:MOSFET N-CH 500V 67A T-MAX RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT50M65JFLL | 功能描述:MOSFET N-CH 500V 58A SOT-227 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT50M65JFLL_03 | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:POWER MOS 7 R FREDFET |
| APT50M65JLL | 功能描述:MOSFET N-CH 500V 58A SOT-227 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
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