參數(shù)資料
型號： APT50M50L2LL
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 89 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝： TO-264MAX, 3 PIN
文件頁數(shù)： 5/5頁
文件大?。?/td> 96K
代理商： APT50M50L2LL
050-7043
Rev
C
2-2004
APT50M50L2LL
Typical Performance Curves
TO-264 MAXTM(L2) Package Outline
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
Drain Current
Gate Voltage
Drain Voltage
T
J
= 125 C
90%
t
d(off)
10%
0
t
f
Switching Energy
T
J
= 125 C
Drain Current
Drain Voltage
Gate Voltage
Switching Energy
10 %
t
d(on)
90%
5 %
10 %
t
r
IC
D.U.T.
APT60DF60
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
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