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參數(shù)資料
| 型號： | APT50GT60SR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Thunderbolt IGBT |
| 中文描述： | IGBT的霹靂 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 419K |
| 代理商： | APT50GT60SR |
0
APT50GT60BR_SR(G)
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
°C/W
gm
MIN
TYP
MAX
.28
N/A
5.9
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
Package Weight
Symbol
R
θ
JC
R
θ
JC
W
T
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 300V
I
C
= 50A
T
J
= 150°C, R
G
= 4.3
,
V
GE
=
15V, L = 100μH,V
CE
= 600V
Inductive Switching (25°C)
V
CC
= 400V
V
GE
= 15V
I
C
= 50A
R
G
= 4.3
T
J
= +25°C
Inductive Switching (125°C)
V
CC
= 400V
V
GE
= 15V
I
C
= 50A
R
G
= 4.3
T
J
= +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
4
Turn-on Switching Energy (Diode)
5
5
Turn-off Switching Energy
6
MIN
TYP
MAX
2500
250
155
7.5
240
20
110
150
14
32
240
36
995
1110
1070
14
32
270
95
1035
1655
1505
UNIT
pF
V
nC
A
ns
μ
J
ns
μ
J
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
For Combi devices, I
ces
includes both IGBT and FRED leakages
3
See MIL-STD-750 Method 3471.
4
E
on1
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5
E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6
E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
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相關(guān)代理商/技術(shù)參數(shù) |
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| APT50GT60SRG | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT |
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| APT50M38JLL_04 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:POWER MOS 7 R MOSFET |
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