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參數(shù)資料
| 型號： | APT50GT60BRG |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Thunderbolt IGBT |
| 中文描述： | IGBT的霹靂 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 419K |
| 代理商： | APT50GT60BRG |
0
APT50GT60BR_SR(G)
TYPICAL PERFORMANCE CURVES
4,000
0.30
0.25
0.20
0.15
0.10
0.05
0
Z
θ
J
,
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
1,000
500
100
160
140
120
100
80
60
40
20
0
C
P
F
I
C
,
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
V
, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
100
200
300
400
500
600
700
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
10 20 30 40 50 60 70 80 90 100
I
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
F
M
,
120
50
10
2
0.5
0.1
0.05
F
max
=
min (f
max
, f
max2
)
0.05
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
P
diss
- P
cond
E
on2
+ E
off
T
J
- T
C
R
θ
JC
f
max2
=
P
diss
=
C
oes
C
res
C
ies
Peak T
J
= P
DM
x Z
θ
JC + TC
Duty Factor D =
t1
/
t2
t2
t1
P
D
Note:
0.114
0.113
0.0057
0.0276
Power
(watts)
RC MODEL
Junction
temp. (
°
C)
Case temperature. (
°
C)
T
J
= 125
°
C
T
= 75
°
C
D = 50 %
V
CE
= 400V
R
G
= 4.3
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PDF描述 |
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| APT50GT60SRG | Thunderbolt IGBT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50GT60SR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50GT60SRG | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT |
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| APT50M38JFLL_04 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:POWER MOS 7 R FREDFET |
| APT50M38JLL | 功能描述:MOSFET N-CH 500V 88A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
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