參數(shù)資料
型號(hào): APT50GT120JU3
廠商: Advanced Power Technology Ltd.
英文描述: ISOTOP Buck chopper Trench IGBT
中文描述: 1000V的集電極降壓斬波溝道IGBT
文件頁(yè)數(shù): 3/7頁(yè)
文件大小: 618K
代理商: APT50GT120JU3
APT50GT120JU3
A
APT website – http://www.advancedpower.com
3 - 7
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
I
F
= 30A
I
F
= 60A
I
F
= 30A
V
R
= 1200V
V
R
= 1200V
V
R
= 200V
I
F
=1A,V
R
=30V
di/dt =100A/μs
Min
Typ
2.0
2.3
1.8
32
Max
2.5
250
500
Unit
V
F
Diode Forward Voltage
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
V
I
RM
Maximum Reverse Leakage Current
μA
C
T
Junction Capacitance
pF
Reverse Recovery Time
T
j
= 25°C
31
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
370
500
5
12
660
3450
220
4650
37
t
rr
Reverse Recovery Time
ns
I
RRM
Maximum Reverse Recovery Current
A
Q
rr
Reverse Recovery Charge
I
F
= 30A
V
R
= 800V
di/dt =200A/μs
nC
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
ns
nC
A
I
F
= 30A
V
R
= 800V
di/dt =1000A/μs
T
j
= 125°C
Thermal and package characteristics
Symbol Characteristic
Min
2500
-55
Typ
29.2
Max
0.36
1.1
20
150
300
1.5
Unit
IGBT
Diode
R
thJC
Junction to Case
R
thJA
V
ISOL
T
J
,T
STG
Storage Temperature Range
T
L
Max Lead Temp for Soldering:0.063” from case for 10 sec
Torque Mounting torque
(Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Wt
Package Weight
Typical IGBT Performance Curve
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
°C/W
V
°C
N.m
g
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
80
I
C
(A)
F
V
CE
=600V
D=50%
R
G
=18
T
J
=125°C
Operating Frequency vs Collector Current
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參數(shù)描述
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APT50GT60BR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT
APT50GT60BRDL 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT