參數(shù)資料
型號(hào): APT50GT120JRDQ2
廠商: Advanced Power Technology Ltd.
英文描述: Thunderbolt IGBT
中文描述: IGBT的霹靂
文件頁數(shù): 4/9頁
文件大?。?/td> 461K
代理商: APT50GT120JRDQ2
0
APT50GT120JRDQ2
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
=
800V
R
=
1
L = 100μH
E
O
,
t
r
R
t
d
,
FIGURE 15, Switching Energy Losses vs. Gate Resistance
E
O
,
t
f
F
t
d
(
,
FIGURE 16, Switching Energy Losses vs Junction Temperature
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
, GATE RESISTANCE (OHMS)
T
, JUNCTION TEMPERATURE (°C)
V
CE
= 800V
V
GE
= +15V
R
G
= 1
V
CE
= 800V
T
J
= 25°C
,
or 125°C
R
= 1
L = 100μH
10
30
35
30
25
20
15
10
5
0
160
140
120
100
80
60
40
20
0
25,000
20,000
15,000
10,000
5,000
0
60,000
50,000
40,000
30,000
20,000
10,000
0
300
250
200
150
100
50
0
60
50
40
30
20
10
0
6000
5000
4000
3000
2000
1000
0
25,000
20,000
15,000
10,000
5,000
0
V
GE
= 15V
V
CE
= 800V
V
GE
= +15V
R
G
= 1
V
CE
= 800V
V
GE
= +15V
R
G
= 1
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
0
10
20
30
40
50
0
25
50
75
100
125
R
G
=
1
, L
=
100
μ
H, V
CE
=
800V
T
J
=
125°C
T
J
=
25°C
T
J
=
125°C
T
J
=
25°C
R
G
=
1
, L
=
100
μ
H, V
CE
=
800V
T
J
=
25 or 125°C,V
GE
=
15V
T
J
=
125°C, V
GE
=
15V
T
J
=
25°C, V
GE
=
15V
E
on2,
100A
E
off,
100A
E
on2,
50A
E
off,
50A
E
on2,
25A
E
off,
25A
V
CE
= 800V
V
GE
= +15V
T
J
= 125°C
E
on2,
100A
E
off,
100A
E
on2,
50A
E
off,
50A
E
on2,
25A
E
off,
25A
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