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參數(shù)資料
| 型號(hào)： | APT50GP90JDF2 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 80 A, 900 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP, 4 PIN |
| 文件頁(yè)數(shù)： | 3/3頁(yè) |
| 文件大?。?/td> | 37K |
| 代理商： | APT50GP90JDF2 |
050-7486
Rev
-
1-2003
ADVANCE
TECHNICAL
INFORMATION
Characteristic / Test Conditions
Maximum Average Forward Current (T
C
= 100°C, Duty Cycle = 0.5)
RMS Forward Current
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3ms)
Symbol
I
F
(AV)
I
F
(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F
= 50A
Maximum Forward Voltage
I
F
= 100A
I
F
= 50A, T
J
= 150°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
3.4
4.3
2.3
APT50GP90JDF2
30
72
210
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
APT50GP90JDF2
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
SOT-227 (ISOTOP) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Emitter/Anode
Collector/Cathode
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Emitter/Anode
Emitter/Anode terminals are
shorted internally. Current
handling capability is equal
for either Emitter/Anode terminal.
ISOTOPis a Registered Trademark of SGS Thomson.
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