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參數資料
| 型號： | APT50GP60JDQ2 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 100 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 |
| 文件頁數： | 7/9頁 |
| 文件大小： | 445K |
| 代理商： | APT50GP60JDQ2 |
050-7496
Rev
A
11-2005
APT50GP60JDQ2
TYPICAL PERFORMANCE CURVES
Characteristic / Test Conditions
Maximum Average Forward Current (T
C = 100°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J = 45°C, 8.3ms)
Symbol
I
F(AV)
I
F(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F = 50A
Forward Voltage
I
F = 100A
I
F = 50A, TJ = 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
2.1
2.6
1.75
APT50GP60JDQ2
30
42
320
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
-
21
-
105
-
115
-
3
-
125
-
465
-
7
-
60
-
830
-
23
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F = 30A, diF/dt = -200A/s
V
R = 400V, TC = 25°C
I
F = 30A, diF/dt = -200A/s
V
R = 400V, TC = 125°C
I
F = 30A, diF/dt = -1000A/s
V
R = 400V, TC = 125°C
I
F = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25°C
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
D = 0.9
0.320
0.515
0.375
0.00278
0.0421
0.242
Power
(watts)
Junction
temp(°C)
RC MODEL
Case temperature(°C)
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