參數(shù)資料
型號： APT50GP60J
廠商： Advanced Power Technology Ltd.
英文描述： POWER MOS 7 IGBT
中文描述： IGBT的功率MOS 7
文件頁數(shù)： 4/6頁
文件大小： 108K
代理商： APT50GP60J
0
APT50GP60J
T
J
=
125°C, V
GE
=
10V
or 15V
T
J
=
25°C, V
GE
=
10V
or 15V
V
CE
= 400V
R
= 5
L = 100 μH
V
GE
=
15V,T
J
=125°C
V
GE
= 15V
V
GE
= 10V
V
GE
=10V,T
J
=125°C
V
GE
=
10V,T
J
=25°C
V
GE
=
15V,T
J
=25°C
T
J
=
25°C, V
GE
=
10V
or 15V
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
100
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
120
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
T
, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
R
G
=
5
, L
=
100
μ
H, V
CE
=
400V
50
60
70
R
G
=
5
, L
=
100
μ
H, V
CE
=
400V
V
= 400V
L = 100 μH
R
G
= 5
T
J
=
25 or 125°C,V
GE
=
15V
T
J
=
25 or 125°C,V
GE
=
10V
V
CE
= 400V
V
GE
= +15V
R
G
= 5
S
E
O
,
t
r
R
t
d
,
E
O
,
t
f
F
t
d
(
,
V
CE
= 400V
V
GE
= +15V
T
J
= 125°C
V
= 400V
L = 100 μH
R
G
= 5
T
J
=125°C, V
GE
=15V
T
J
=
125°C, V
GE
=
10V
or 15V
T
J
=125°C,V
GE
=10V
T
J
= 25°C, V
GE
=10V
T
J
= 25°C, V
GE
=15V
20
30
40
50
60
70
80
90
100
20
30
40
50
60
70
80
90
100
20
30
40
80
90
100
20
30
40
50
60
70
80
90
100
10
20
30
40
50
60
70
80
90
100
20
30
40
50
60
70
80
90
100
0
10
20
30
40
50
-50
-25
0
25
50
75
100
125
40
35
30
25
20
15
10
05
0
90
80
70
60
50
40
30
20
10
0
4000
3500
3000
2500
2000
1500
1000
500
0
6000
5000
4000
3000
2000
1000
0
140
120
100
80
60
40
20
0
100
80
60
40
20
0
3500
3000
2500
2000
1500
1000
500
0
4000
3500
3000
2500
2000
1500
1000
500
0
E
off
100A
E
on2
100A
E
on2
25A
E
off
50A
E
on2
50A
E
off
25A
E
on2
25A
E
off
50A
E
on2
50A
E
on2
100A
E
off
100A
E
off
25A
V
CE
= 400V
T
J
R
= 5
L = 100 μH
TYPICAL PERFORMANCE CURVES
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT50GP60JDQ2 功能描述:IGBT 600V 100A 329W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:POWER MOS 7® 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APT50GP60LDL 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT
APT50GP60LDLG 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:IGBT 600V 150A TO-264 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APT50GP60S 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT
APT50GP60SG 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - SINGLE - Rail/Tube
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