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參數(shù)資料
| 型號： | APT50GN60BG |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | IGBT |
| 中文描述： | IGBT的 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 302K |
| 代理商： | APT50GN60BG |
0
APT50GN60B(G)
TYPICAL PERFORMANCE CURVES
160
V
GE
= 15V
250μs PULSE
TEST<0.5 % DUTY
CYCLE
15V
9V
8V
7V
10V
V
= 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T
J
= 25°C)
160
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T
J
= 125°C)
16
I
C
= 50A
T
J
= 25°C
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
GATE CHARGE (nC)
FIGURE 4, Gate Charge
V
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
T
, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
T
, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
T
, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
C
,
V
C
,
I
C
,
I
C
,
V
I
C
D
V
C
,
V
G
,
I
C
,
140
120
100
80
60
40
20
0
140
120
100
80
60
40
20
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.10
1.05
1.00
0.95
0.90
200
180
160
140
120
100
80
60
40
20
0
14
12
10
8
6
4
2
0
3.0
2.5
2.0
1.5
1.0
0.5
0
140
120
100
80
60
40
20
0
13V
11V
12V
V
CE
= 120V
V
CE
=480V
0
1
2
3
4
5
0
5
10
15
20
25
30
0
2
4
6
8
10
12
14
0
50
100 150 200 250 300 350 400
8
10
12
14
16
0
25
50
75
100
125
150
175
-50 -25
0
25 50 75 100 125 150 175
-50 -25
0
25 50 75 100 125 150 175
V
CE
= 300V
T
J
= 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
I
C
= 50A
I
C
= 100A
I
C
= 25A
I
C
= 100A
I
C
= 50A
I
C
= 25A
T
J
= 125°C
T
J
= 25°C
T
J
= -55°C
T
J
= 175°C
T
J
= 125°C
T
J
= 25°C
T
J
= -55°C
T
J
= 175°C
Limited
Lead Temperature
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PDF描述 |
|---|---|
| APT50GN60B | IGBT |
| APT50GP60B2DF2 | POWER MOS 7 IGBT |
| APT50GP60B2DQ2 | POWER MOS 7 IGBT |
| APT50GP60B2DQ2G | POWER MOS 7 IGBT |
| APT50GP60B | POWER MOS 7 IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50GN60S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GN60SDQ2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GN60SDQ2G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GN60SG | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GP60B | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
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