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參數(shù)資料
| 型號： | APT50GN60BDQ2G |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | IGBT |
| 中文描述： | IGBT的 |
| 文件頁數(shù)： | 8/9頁 |
| 文件大?。?/td> | 337K |
| 代理商： | APT50GN60BDQ2G |
0
APT50GN60BDQ2(G)
T
J
= 125
°
C
V
R
= 400V
20A
40A
80A
180
160
140
120
100
80
60
40
20
0
25
20
15
10
5
0
Duty cycle = 0.5
T
J
= 175
°
C
Figure 29. Dynamic Parameters vs. Junction Temperature
0
25
50
75
100
125
150
25
50
75
100
125
150
175
1
10
100 200
80
70
60
50
40
30
20
10
0
C
J
,
K
f
,
(
(
μ
s
I
F
(
T
, JUNCTION TEMPERATURE (
°
C)
Case Temperature (
°
C)
Figure 30. Maximum Average Forward Current vs. CaseTemperature
V
, REVERSE VOLTAGE (V)
Figure 31. Junction Capacitance vs. Reverse Voltage
Figure 27. Reverse Recovery Charge vs. Current Rate of Change
Q
r
,
I
F
,
(
(
I
R
,
t
r
,
(
(
T
J
= 175
°
C
T
J
= -55
°
C
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= 125
°
C
V
R
= 400V
80A
20A
40A
Figure 25. Forward Current vs. Forward Voltage
0
0.5
1
1.5
2
2.5
3
0
-di
/dt, CURRENT RATE OF CHANGE(A/
μ
s)
Figure 26. Reverse Recovery Time vs. Current Rate of Change
200
400
600
800
1000
1200
0
-di
/dt, CURRENT RATE OF CHANGE (A/
μ
s)
200
400
600
800
1000
1200
0
-di
/dt, CURRENT RATE OF CHANGE (A/
μ
s)
Figure 28. Reverse Recovery Current vs. Current Rate of Change
200
400
600
800
1000
1200
120
100
80
60
40
20
0
1400
1200
1000
800
600
400
200
0
T
J
= 125
°
C
V
R
= 400V
80A
40A
20A
t
rr
Q
rr
Q
rr
t
rr
I
RRM
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
200
180
160
140
120
100
80
60
40
20
0
V
, ANODE-TO-CATHODE VOLTAGE (V)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50GN60BG | 功能描述:IGBT 600V 107A 366W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT50GN60S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GN60SDQ2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GN60SDQ2G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GN60SG | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
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