- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369365 > APT50GF60LRD (Advanced Power Technology Ltd.) Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance:+/- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C PDF資料下載
參數(shù)資料
| 型號(hào)： | APT50GF60LRD |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance:+/- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C |
| 中文描述： | ⑩的快速IGBT是一種高壓IGBT的新一代。 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 82K |
| 代理商： | APT50GF60LRD |
0
APT50GF60BR
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
DYNAMIC CHARACTERISTICS
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.66V
CES
I
C
= I
C2
Resistive Switching (25
°
C)
V
GE
= 15V
V
CC
= 0.66V
CES
I
C
= I
C2
R
G
= 10
Inductive Switching (150
°
C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
T
J
= +150
°
C
Inductive Switching (25
°
C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
T
J
= +25
°
C
V
CE
= 20V, I
C
= I
C2
MIN
TYP
MAX
2250
255
155
175
18
100
29
118
150
190
28
75
265
185
1.8
2.4
4.2
30
80
240
43
3.6
6
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
UNIT
°
C/W
oz
gm
lb
in
N
m
MIN
TYP
MAX
0.42
40
0.22
6.1
10
1.1
Characteristic
Junction to Case
Junction to Ambient
Package Weight
Mounting Torque (
using a 6-32 or 3mm Binding Head Machine Screw
)
Symbol
R
JC
R
JA
W
T
Torque
THERMAL AND MECHANICAL CHARACTERISTICS
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
I
C
= I
C2
,
R
GE
= 25 ,
L = 100μH, T
j
= 25
°
C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT6015JVFR | POWER MOS V FREDFET |
| APT6020B2VFR | POWER MOS V FREDFET |
| APT6020LVFR | POWER MOS V FREDFET |
| APT6027HVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT60D30LCTG | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50GL60BN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 50A I(C) | TO-247 |
| APT50GLQ65JU2 | 功能描述:POWER MODULE - IGBT 制造商:microsemi corporation 系列:- 零件狀態(tài):在售 IGBT 類型:溝槽型場截止 配置:升壓斬波器 電壓 - 集射極擊穿（最大值）:650V 電流 - 集電極（Ic）（最大值）:80A 功率 - 最大值:220W 不同?Vge，Ic 時(shí)的?Vce（on）:2.3V @ 15V，50A 電流 - 集電極截止（最大值）:50μA 不同?Vce 時(shí)的輸入電容（Cies）:3.1nF @ 25V 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商器件封裝:ISOTOP? 標(biāo)準(zhǔn)包裝:1 |
| APT50GN120B2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:IGBT |
| APT50GN120B2G | 功能描述:IGBT 1200V 134A 543W TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT50GN120L2DQ2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:IGBT |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。