參數(shù)資料
型號(hào): APT50GF60JU3
廠商: Advanced Power Technology Ltd.
英文描述: ISOTOP Buck chopper NPT IGBT
中文描述: 1000V的集電極IGBT的降壓斬波器不擴(kuò)散核武器條約
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 481K
代理商: APT50GF60JU3
APT50GF60JU3
A
APT website – http://www.advancedpower.com
2 - 8
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
Test Conditions
V
GE
= 0V, I
C
= 1mA
V
GE
= 0V
V
CE
= 600V
V
GE
=15V
I
C
= 50A
V
GE
= V
CE
, I
C
= 700μA
V
GE
= ±20V, V
CE
= 0V
Min
600
4.5
Typ
2.1
2.2
5.5
Max
40
1000
2.7
2.8
6.5
±100
Unit
V
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
CES
Zero Gate Voltage Collector Current
μA
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Q
g
Total gate Charge
Q
ge
Gate – Emitter Charge
Q
gc
Gate – Collector Charge
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
ts
Total switching Losses
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
on
Turn-on Switching Energy
E
off
Turn-off Switching Energy
E
ts
Total switching Losses
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Min
Typ
2250
255
155
175
18
100
29
118
150
190
30
80
240
43
3.6
28
75
265
185
1.8
2.4
4.2
Max
Unit
pF
V
GS
= 15V
V
Bus
= 300V
I
C
= 50A
nC
Resistive Switching (25°C)
V
GE
= 15V
V
Bus
= 300V
I
C
= 50A
R
G
= 10
Inductive Switching (25°C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 50A
R
G
= 10
ns
ns
mJ
ns
Inductive Switching (150°C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 50A
R
G
= 10
mJ
相關(guān)PDF資料
PDF描述
APT50GN120B2 IGBT
APT50GN120B2G IGBT
APT50GN120L2DQ2 IGBT
APT50GN120L2DQ2G IGBT
APT50GN60BDQ2 IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT50GF60LRD 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
APT50GL60BN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 50A I(C) | TO-247
APT50GLQ65JU2 功能描述:POWER MODULE - IGBT 制造商:microsemi corporation 系列:- 零件狀態(tài):在售 IGBT 類型:溝槽型場(chǎng)截止 配置:升壓斬波器 電壓 - 集射極擊穿(最大值):650V 電流 - 集電極(Ic)(最大值):80A 功率 - 最大值:220W 不同?Vge,Ic 時(shí)的?Vce(on):2.3V @ 15V,50A 電流 - 集電極截止(最大值):50μA 不同?Vce 時(shí)的輸入電容(Cies):3.1nF @ 25V 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 工作溫度:-55°C ~ 175°C(TJ) 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商器件封裝:ISOTOP? 標(biāo)準(zhǔn)包裝:1
APT50GN120B2 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:IGBT
APT50GN120B2G 功能描述:IGBT 1200V 134A 543W TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿(最大):1200V Vge, Ic時(shí)的最大Vce(開(kāi)):3V @ 15V,100A 電流 - 集電極 (Ic)(最大):200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件