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參數(shù)資料
| 型號： | APT50GF120LR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Thin Film RF/Microwave Capacitor; Capacitance:2.7pF; Capacitance Tolerance:+/- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C |
| 中文描述： | 該快速IGBT是一種高壓IGBT的新一代。 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | APT50GF120LR |
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
DYNAMIC CHARACTERISTICS (IGBT)
APT50GF120JRD
UNIT
°
C/W
oz
gm
lbin
Nm
MIN
TYP
MAX
0.24
0.66
20
1.03
29.2
10
1.1
Characteristic
Junction to Case (IGBT)
Junction to Case (FRED)
Junction to Ambient
Package Weight
Mounting Torque (
Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine
)
Symbol
R
Θ
JC
R
Θ
JA
W
T
Torque
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
GE
V
CC
= 0.5V
CES
I
C
= I
C2
Resistive Switching (25
°
C)
V
GE
= 15V
V
CC
= 0.8V
CES
I
C
= I
C2
G
= 5
Inductive Switching (150
°
C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
G
= 5
T
J
= +150
°
C
Inductive Switching (25
°
C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 5
T
J
= +25
°
C
V
CE
= 20V, I
C
= I
C2
MIN
TYP
MAX
5500
7400
650
910
330
500
525
45
310
50
160
300
190
45
110
600
150
7
8
15
45
110
500
55
12.5
6
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
0
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
4
Turn-off Switching Energy
Total Switching Losses
4
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
4
Forward Transconductance
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
Leakages include the FRED and IGBT.
3
See MIL-STD-750 Method 3471
4
Switching losses include the FRED and IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein.
相關PDF資料 |
PDF描述 |
|---|---|
| APT50GF60B2RD | The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT50GF60BR | Thin Film RF/Microwave Capacitor; Capacitance:3.3pF; Capacitance Tolerance:+/- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C |
| APT50GF60HR | The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT50GF60LRD | Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance:+/- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C |
| APT6015JVFR | POWER MOS V FREDFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT50GF120LRG | 功能描述:IGBT 1200V 135A 781W TO264 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT50GF60B2RD | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT50GF60BR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT50GF60HR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT50GF60JCU2 | 制造商:Microsemi Corporation 功能描述:Microsemi APT50GF60JCU2 IGBTs |
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