參數(shù)資料
型號： APT50GF120JRD
廠商： Advanced Power Technology Ltd.
英文描述： The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
中文描述： ⑩的快速IGBT是一種高壓IGBT的新一代。
文件頁數(shù)： 3/4頁
文件大小： 51K
代理商： APT50GF120JRD
0
APT50GF120JRD
PRELMNARY
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
C
= 60
°
C, Duty Cycle = 0.5)
RMS Forward Current
Non-Repetitive Forward Surge Current (T
J
= 45
°
C, 8.3mS)
Symbol
V
R
V
RRM
V
RWM
I
F
(AV)
I
F
(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F
= 60A
Maximum Forward Voltage
I
F
= 120A
I
F
= 60A, T
J
= 150
°
C
STATIC ELECTRICAL CHARACTERISTICS (FRED)
UNIT
Volts
Amps
UNIT
Volts
MIN
TYP
MAX
2.5
2.0
2.0
APT50GF120JRD
1200
60
100
540
MAXIMUM RATINGS (FRED)
All Ratings: T
C
= 25
°
C unless otherwise specified.
ULTRAFAST SOFT RECOVERY PARALLEL DIODE
MIN
TYP
MAX
70
85
70
130
170
170
18
30
29
40
630
1820
12
12
900
600
UNIT
ns
Amps
nC
Volts
A/
μ
s
Characteristic
Reverse Recovery Time, I
F
= 1.0A, di
F
/dt
= -15A/
μ
s, V
R
= 30V,
T
J
= 25
°
C
Reverse Recovery Time
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 100
°
C
I
F
= 60A, di
F
/dt
= -480A/
μ
s, V
R
= 650V
Forward Recovery Time
I
F
= 60A, di
F
/dt
= 480A/
μ
s, V
R
= 650V
Reverse Recovery Current
I
F
= 60A, di
F
/dt
= -480A/
μ
s, V
R
= 650V
Recovery Charge
I
F
= 60A, di
F
/dt
= -480A/
μ
s, V
R
= 650V
Forward Recovery Voltage
I
F
= 60A, di
F
/dt
= 480A/
μ
s, V
R
= 650V
Rate of Fall of Recovery Current
I
F
= 60A, di
F
/dt
= -480A/
μ
s, V
R
=650V
DYNAMIC CHARACTERISTICS (FRED)
Symbol
t
rr1
t
rr2
t
rr3
t
fr1
t
fr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
V
fr1
V
fr2
d i M / d t
相關PDF資料
PDF描述
APT50GF120LR Thin Film RF/Microwave Capacitor; Capacitance:2.7pF; Capacitance Tolerance:+/- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C
APT50GF60B2RD The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
APT50GF60BR Thin Film RF/Microwave Capacitor; Capacitance:3.3pF; Capacitance Tolerance:+/- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C
APT50GF60HR The Fast IGBT is a new generation of high voltage power IGBTs.
APT50GF60LRD Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance:+/- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C
相關代理商/技術參數(shù)
參數(shù)描述
APT50GF120JRDQ3 功能描述:IGBT 1200V 120A 521W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B
APT50GF120LR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs.
APT50GF120LRG 功能描述:IGBT 1200V 135A 781W TO264 RoHS:是 類別:分離式半導體產(chǎn)品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件
APT50GF60B2RD 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
APT50GF60BR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs.
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