參數資料
型號： APT50GF120B2R
廠商： Advanced Power Technology Ltd.
英文描述： The Fast IGBT is a new generation of high voltage power IGBTs.
中文描述： 該快速IGBT是一種高壓IGBT的新一代。
文件頁數： 2/3頁
文件大?。?/td> 37K
代理商： APT50GF120B2R
0
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
DYNAMIC CHARACTERISTICS
UNIT
°
C/W
lbin
MIN
TYP
MAX
0.32
40
10
Characteristic
Junction to Case
Junction to Ambient
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
Symbol
R
Θ
JC
R
Θ
JA
Torque
THERMAL CHARACTERISTICS
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
MIN
TYP
MAX
3450
4850
330
500
230
350
330
450
30
50
205
290
55
245
155
275
45
75
100
150
540
810
40
80
7.0
7.0
14.0
50
115
480
40
12.0
8
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
I
C
= I
C2
,
V
CC
= 50V,
R
GE
= 25
,
L = 68
μ
H, T
j
= 25
°
C
2
3
See MIL-STD-750 Method 3471
4
The maximum current is limited by lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.50V
CES
I
C
= I
C2
Resistive Switching (25
°
C)
V
GE
= 15V
V
CC
= 0.80V
CES
I
C
= I
C2
R
G
= 10
Inductive Switching (150
°
C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
T
J
= +150
°
C
Inductive Switching (25
°
C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
T
J
= +25
°
C
V
CE
= 20V, I
C
= I
C2
APT50GF120B2R/LR
相關PDF資料
PDF描述
APT50GF120JRD The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
APT50GF120LR Thin Film RF/Microwave Capacitor; Capacitance:2.7pF; Capacitance Tolerance:+/- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C
APT50GF60B2RD The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
APT50GF60BR Thin Film RF/Microwave Capacitor; Capacitance:3.3pF; Capacitance Tolerance:+/- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C
APT50GF60HR The Fast IGBT is a new generation of high voltage power IGBTs.
相關代理商/技術參數
參數描述
APT50GF120B2RG 功能描述:IGBT 1200V 135A 781W TMAX RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件
APT50GF120JRD 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
APT50GF120JRDQ3 功能描述:IGBT 1200V 120A 521W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B
APT50GF120LR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs.
APT50GF120LRG 功能描述:IGBT 1200V 135A 781W TO264 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件
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