參數(shù)資料
型號(hào)： APT5040KFLL
廠商： Advanced Power Technology Ltd.
英文描述： POWER MOS 7 FREDFET
中文描述： 功率MOS 7 FREDFET
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 104K
代理商： APT5040KFLL
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Turn-off Switching Energy
APT5040KFLL
MAX
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
SINGLE PULSE
Z
θ
J
,
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
0.1
0.05
0.3
0.7
0.9
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
17A)
Peak Diode Recovery
dv
/
dt 5
Reverse Recovery Time
(I
S
= -I
D
17A,
di
/
dt
= 100A/μs, V
R
= 333V)
THERMAL CHARACTERISTICS
Symbol
Characteristic
Reverse Recovery Charge
(I
S
= -I
D
17A,
di
/
dt
= 100A/μs, V
R
= 333V)
Peak Recovery Current
(I
S
= -I
D
17A,
di
/
dt
= 100A/μs, V
R
= 333V)
Symbol
I
S
I
SM
V
SD
dv
/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
μC
Amps
MIN
TYP
MAX
17
68
1.3
15
280
350
1110
1690
10
12
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
212
272
853
1299
7.8
9
R
θ
JC
R
θ
JA
MIN
TYP
MAX
.50
TBD
UNIT
°C/W
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
4 Starting T
j
=
+25°C, L = 2.94mH, R
G
=
25
, Peak I
L
= 17A
5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
I
≤
-
I
17A
di
/
dt
≤
700A/μs
V
≤
V
T
≤
150
°
C
6 Eon includes diode reverse recovery. See figures 18, 20.
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
6
Turn-off Switching Energy
Turn-on Switching Energy
6
Test Conditions
V
GS
= 0V
V
DS
= 25V
f
= 1 MHz
V
GS
= 10V
V
DD
= 250V
I
D
= 17A
@ 25°C
RESISTIVE SWITCHING
V
GS
=
15V
V
DD
=
250V
I
D
=
17A
@ 25°C
R
G
=
0.6
INDUCTIVE SWITCHING @ 25°C
V
DD
=
333V, V
GS
= 15V
I
D
=
17A, R
G
=
5
INDUCTIVE SWITCHING @ 125°C
V
DD
=
333V V
GS
= 15V
I
D
=
17A, R
G
=
5
MIN
TYP
1006
234
16
26
8
14
9
4
18
2
73
26
198
47
UNIT
pF
nC
ns
μ
J
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 9a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
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參數(shù)描述
APT5040KFLLG 功能描述:MOSFET N-CH 500V 17A TO-220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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