- 您現(xiàn)在的位置：買賣IC網 > PDF目錄51265 > APT5020BFLC 26 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 PDF資料下載
參數(shù)資料
| 型號： | APT5020BFLC |
| 元件分類： | JFETs |
| 英文描述： | 26 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 31K |
| 代理商： | APT5020BFLC |
ADVANCED
TECHNICAL
INFORMATION
DYNAMIC CHARACTERISTICS
APT5020BFLC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/s)
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/s)
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
t f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.6W
MIN
TYP
MAX
2500
520
100
70
17
40
10
11
25
6
UNIT
pF
nC
ns
MIN
TYP
MAX
26
104
1.3
5
Tj = 25°C
250
Tj = 125°C
500
Tj = 25°C
1.3
Tj = 125°C
4.5
Tj = 25°C
12
Tj = 125°C
18
THERMAL CHARACTERISTICS
Symbol
RqJC
RqJA
MIN
TYP
MAX
0.42
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
050-5926
rev-
11-99
1 Repetitive Rating: Pulse width limited by maximum junction
4 Starting Tj = +25°C, L = 3.85mH, RG = 25W, Peak IL = 26A
temperature.
5 IS
ID [Cont.], di/
dt = 100A/s, VDD VDSS, Tj 150°C, RG = 2.0W,
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
VR = 200V.
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
TO-247 Package Outline
相關PDF資料 |
PDF描述 |
|---|---|
| APT5020BLC | 26 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT5020SLC | 26 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5020BN-GULLWING | 28 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5020BN-BUTT | 28 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5022BN-GULLWING | 27 A, 500 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT5020BLC | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. |
| APT5020BN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT5020BNF | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 28A I(D) | TO-247AD |
| APT5020BNFR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 28A I(D) | TO-247AD |
| APT5020BNG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復。