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參數(shù)資料
| 型號： | APT5019HLL |
| 元件分類： | JFETs |
| 英文描述： | 21 A, 500 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA |
| 封裝： | HERMETIC SEALED, TO-258, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 69K |
| 代理商： | APT5019HLL |
050-7319
Rev
-
7-2002
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
R
G
= 1.6
MIN
TYP
MAX
2833
3500
600
900
50
70
72
110
16
20
42
70
10
20
918
26
39
14
30
UNIT
pF
nC
ns
APT5019HLL
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -I
D[Cont.]
)
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/s)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/s)
Peak Diode Recovery dv/dt 5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
C
V/ns
MIN
TYP
MAX
21
84
1.3
540
7.36
8
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 5.90mH, RG = 25, Peak IL = 21A
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
5dv/
dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤
-I
D
[Cont.]
di/
dt ≤ 700A/s
V
R ≤
V
DSS
T
J ≤
150
°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.60
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/
dt
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULARPULSEDURATION(SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.60
0.1
0.01
0.001
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT5019HVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT501R1AN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7.5A I(D) | TO-3 |
| APT501R1BN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 9A I(D) | TO-247AD |
| APT501R1BNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 9.5A I(D) | TO-247AD |
| APT501R1CN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7A I(D) | TO-254ISO |
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