參數(shù)資料
型號(hào)： APT5014
廠商： Advanced Power Technology Ltd.
英文描述： Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
中文描述： 電源MOS 7TM是一個(gè)低損耗，高電壓，N溝道增強(qiáng)模式的新一代功率MOSFET
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 61K
代理商： APT5014
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D[Cont.]
)
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/μs)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/μs)
INFORMATION
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
GS
= 10V
DD
= 0.5 V
DSS
= I
D[Cont.]
@ 25°C
GS
= 15V
DD
= 0.5 V
DSS
= I
D[Cont.]
@ 25°C
R
G
= 1.6
W
MIN
TYP
MAX
3400
700
53
85
22
39
15
12
39
11
UNIT
pF
nC
ns
APT5014 BLL - SLL
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
0
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
μC
MIN
TYP
MAX
35
140
1.3
510
10.2
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
4
Starting T
j
=
+25°C, L =2.12mH, R
G
=
25
W
,
Peak I
L
= 35A
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
R
q
JC
R
q
JA
MIN
TYP
MAX
0.31
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
15.49 (.610)
5.38 (.212)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.80 (.819)
1.65 (.065)
1.01 (.040)
3.50 (.138)
2.87 (.113)
4.69 (.185)
1.49 (.059)
2.21 (.087)
0.40 (.016)
D
Drain
Source
Gate
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
TO
-
247 Package Outline
15.95 (.628)
1.22 (.048)
5.45 (.215) BSC
4.98 (.196)
1.47 (.058)
2.67 (.105)
{3 Plcs}
0.46 (.018)
0.020 (.001)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
3.81 (.150)
D
(
1.98 (.078)
Gate
Drain
Source
1.27 (.050)
11.51 (.453)
13.41 (.528)
Revised
1.04 (.041)
13.79 (.543)
4/18/95
D
3
PAK Package Outline
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
相關(guān)PDF資料
PDF描述
APT5014BLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
APT5014LLC Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
APT5014LVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT5014SLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
APT5014B2LC Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT5014B2LC 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
APT5014B2VFR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V FREDFET
APT5014B2VR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT5014BFLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT5014BFLL_04 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET
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