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參數(shù)資料
| 型號(hào)： | APT40M42JN |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | XTAL MTL T/H HC49/US |
| 中文描述： | N溝道增強(qiáng)型高壓功率MOSFET |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 59K |
| 代理商： | APT40M42JN |
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
G
,
I
D
,
I
D
,
C
1
5
10
50
100
400
.1
.5
1
5
10
50
0
200
400
600
800
1000
0
0.4
0.8
1.2
1.6
2.0
APT40M42JN
TC =+25
°
C
TJ =+150
°
C
SINGLE PULSE
500
100
50
10
5
1
.5
.1
20
16
12
8
4
0
50,000
10,000
5,000
1,000
500
400
100
50
10
5
1
I
D
= I
D
[Cont.]
OPERATION HERE
LIMITED BY R
DS
(ON)
VDS=80V
VDS=200V
VDS=320V
TJ =+150
°
C
TJ =+25
°
C
TJ =-55
°
C
Crss
Coss
Ciss
10
μ
S
100
μ
S
1mS
10mS
100mS
DC
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
Dimensions in Millimeters and (Inches)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
SOT-227 (ISOTOP
) Package Outline
ISOTOP
is a Registered Trademark of SGS Thomson.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0
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