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參數(shù)資料
| 型號： | APT40GU60JU3 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 86 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 522K |
| 代理商： | APT40GU60JU3 |
APT40GU60JU3
A
PT
40G
U
60J
U
3–
R
ev
0
A
pr
il,
2004
APT website – http://www.advancedpower.com
2- 9
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 250A
600
V
Tj = 25°C
250
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
2500
A
Tj = 25°C
2.2
2.7
VCE(on)
Collector Emitter on Voltage
VGE =15V
IC = 40A
Tj = 125°C
2.1
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 1mA
3
4.5
6
V
IGES
Gate – Emitter Leakage Current
VGE = ±20V, VCE = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
4610
Coes
Output Capacitance
395
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
25
pF
Qg
Total gate Charge
135
Qge
Gate – Emitter Charge
30
Qgc
Gate – Collector Charge
VGS = 15V
VBus = 300V
IC = 40A
40
nC
Td(on)
Turn-on Delay Time
20
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
64
Tf
Fall Time
45
ns
Eon1
Turn-on Switching Energy
385
Eon2
Turn-on Switching Energy
u
644
Eoff
Turn-off Switching Energy
v
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 40A
RG = 5
W
352
J
Td(on)
Turn-on Delay Time
20
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
89
Tf
Fall Time
69
ns
Eon1
Turn-on Switching Energy
385
Eon2
Turn-on Switching Energy
u
972
Eoff
Turn-off Switching Energy
v
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 40A
RG = 5
W
615
J
u Eon2 includes diode reverse recovery
v In accordance with JEDEC standard JESD24-1
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