參數(shù)資料
型號(hào)： APT40GT60BR
廠商： Advanced Power Technology Ltd.
英文描述： The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
中文描述： ⑩的迅雷是IGBT的高壓電源IGBT的新一代。
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 24K
代理商： APT40GT60BR
THERMAL CHARACTERISTICS
SPECFCAION
Forward Transconductance
OBJECTVETECHNCAL
SPECFCAION
CE
= 20V, I
C
= I
C2
Symbol
C
oes
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
on
off
ts
t
d
(on)
t
r
t
d
(off)
t
f
ts
gfe
DYNAMIC CHARACTERISTICS
APT40GT60BR
UNIT
°
C/W
lbin
MIN
TYP
MAX
0.36
40
10
Characteristic
Junction to Case
Junction to Ambient
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
Symbol
R
Θ
JC
R
Θ
JA
Torque
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Test Conditions
Capacitance
GE
= 0V
CE
= 25V
f = 1 MHz
Gate Charge
GE
= 15V
CC
= 0.5V
CES
I
C
= I
C2
Resistive Switching (25
°
C)
GE
= 15V
CC
= 0.8V
CES
I
C
= I
C2
R
G
= 10
Inductive Switching (150
°
C)
CLAMP
(Peak)
= 0.66V
CES
GE
= 15V
I
C
= I
C2
R
G
= 10
J
= +150
°
Inductive Switching (25
°
C)
CLAMP
(Peak)
= 0.66V
CES
GE
= 15V
I
C
= I
C2
R
G
= 10
J
= +25
°
MIN
TYP
MAX
2200
220
130
190
80
15
10
34
115
125
25
40
190
70
1.5
0.9
2.4
25
40
160
65
1.8
4
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
I
C
= I
C2
,
V
CC
= 50V,
R
GE
= 25
,
L = 200
μ
H, T
j
= 25
°
C
2
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
0
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