參數(shù)資料
型號(hào): APT4018BN
廠商: Advanced Power Technology Ltd.
英文描述: N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
中文描述: N溝道增強(qiáng)型高壓功率MOSFET
文件頁(yè)數(shù): 4/4頁(yè)
文件大?。?/td> 51K
代理商: APT4018BN
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
G
,
I
D
,
I
D
,
C
TO-247AD Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
Gate
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2-Plcs.
3.55 (.140)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Dimensions in Millimeters and (Inches)
D
1
5
10
50 100
400
.01
.05 .1
.5 1
5 10
50
0
40
80
120
160
200
0
0.5
1.0
1.5
2.0
2.5
3.0
APT4016/4018BN
TC =+25
°
C
TJ =+150
°
C
SINGLE PULSE
200
100
10
1
.1
20
16
12
8
4
0
I
D
= I
D
[Cont.]
10,000
5,000
1,000
500
100
200
100
50
20
10
5
2
1
Ciss
Coss
Crss
TJ =+150
°
C
TJ =+25
°
C
VDS=80V
VDS=320V
VDS=200V
LIMITED BY R
DS
(ON)
APT4016BN
APT4016BN
APT4018BN
APT4018BN
10
μ
S
100
μ
S
1mS
10mS
100mS
DC
0
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