參數(shù)資料
型號(hào): APT33GF120LRD
元件分類: IGBT 晶體管
英文描述: 52 A, 1200 V, N-CHANNEL IGBT, TO-264AA
封裝: TO-264, 3 PIN
文件頁(yè)數(shù): 8/8頁(yè)
文件大?。?/td> 113K
代理商: APT33GF120LRD
APT33GF120B2RD/LRD
052-6254
Rev
C
3-2003
T-MAXTM (B2) Package Outline
TO-264 (L) Package Outline
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Gate
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50
(.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Dimensions in Millimeters and (Inches)
2-Plcs.
Collector
(Cathode)
Emitter
(Anode)
Gate
Collector
(Cathode)
Collector
(Cathode)
Collector
(Cathode)
Emitter
(Anode)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
相關(guān)PDF資料
PDF描述
APT4020SVFR 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET
APT4020BVFR 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT4020SVFRG 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET
APT4025BN 23 A, 400 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT4020BN 26 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
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