參數(shù)資料
型號: APT30GP60LDLG
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 100 A, 600 V, N-CHANNEL IGBT, TO-264AA
封裝: ROHS COMPLIANT, TO-264, 3 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 199K
代理商: APT30GP60LDLG
052-6355
Rev
A
7-2008
T
J = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
TYPICAL PREFORMANCE CURVES
T
C=-55°C
T
C=125°C
T
C=25°C
V
CE=480V
V
CE=300V
V
CE=120V
V
GE = 10V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
V
GE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
V
GE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
T
J = 25°C
T
J = -55°C
T
J = 125°C
T
C=-55°C
T
C=25°C
T
C=125°C
250μs PULSE TEST
<0.5 % DUTY CYCLE
I
C = 30A
T
J = 25°C
BV
CES
,COLLECT
OR-T
O-EMITTER
BREAKDOWN
V
CE
,COLLECT
OR-T
O-EMITTER
VOL
TAGE
(V)
I C
,COLLECT
OR
CURRENT
(A)
I C
,COLLECT
OR
CURRENT
(A)
VOL
TAGE
(NORMALIZED)
I
C,
DC
COLLECT
OR
CURRENT(A)
V
CE
,COLLECT
OR-T
O-EMITTER
VOL
TAGE
(V)
V
GE
,GA
TE-T
O-EMITTER
VOL
TAGE
(V)
I C
,COLLECT
OR
CURRENT
(A)
APT30GP60B2DL_LDL(G)
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE
= 15V)
FIGURE 2, Output Characteristics (V
GE
= 10V)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE, GATE-TO-EMITTER VOLTAGE (V)
T
J, JUNCTION TRMPERATURE (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
60
50
40
30
20
10
0
16
14
12
10
8
6
4
2
0
3.5
3
2.5
2
1.5
1
0.5
0
140
120
100
80
60
40
20
0
I
C
=
60A
I
C
=
30A
I
C
=
15A
I
C
=
60A
I
C
=
30A
I
C
=
15A
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
12
0 10 20 30 40 50 60 70 80 90 100
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75 100 125 150
-50
-25
0
25
50
75 100 125 150
60
50
40
30
20
10
0
200
180
160
140
120
100
80
60
40
20
0
4
3.5
3
2.5
2
1.5
1
0.5
0
1.2
1.15
1.10
1.05
1.0
0.95
0.90
0.85
0.8
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