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參數(shù)資料
| 型號(hào)： | APT30GP60B |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | POWER MOS 7 IGBT |
| 中文描述： | IGBT的功率MOS 7 |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大小： | 92K |
| 代理商： | APT30GP60B |
0
300
100
50
10
0
10
20
30
40
50
60
10,000
5,000
1,000
500
100
50
10
5
0
140
120
100
80
60
40
20
0
C
P
F
I
C
,
F
M
,
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
V
, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
100
200
300
400
500
600
700
I
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current
Cres
Cies
Coes
TYPICAL PREFORMANCE CURVES
T
J
= 125
°
C
T
= 75
°
C
D = 50 %
V
CE
= 400V
R
G
= 5
APT30GP60B
max
F
max1
max2
max1
d(on)
P
E
T
R
θ
r
d(off)
f
diss
cond
P
E
+
max 2
on2
off
J
C
diss
JC
min(f
,f
0.05
+
)
f
t
t
t
t
f
T
P
=
=
+
+
=
=
0.30
0.25
0.20
0.15
0.10
0.05
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
Z
θ
J
,
0.3
0.9
0.7
0.1
0.05
0.5
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
0.0196
0.107
0.144
0.00500F
0.0132F
0.135F
Power
(Watts)
Junction
temp. ( ”C)
RC MODEL
Case temperature
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT30GP60B2DL | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT30GP60B2DLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A 463W TMAX 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A T-MAX 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT30GP60BD1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Volts:600V VF/Vce(ON):2.7V ID(cont):49Amps|Ultrafast IGBT Family |
| APT30GP60BDQ1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT30GP60BDQ1G | 功能描述:IGBT 600V 100A 463W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開(kāi)）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
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