- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366565 > APT20M18LVR (Advanced Power Technology Ltd.) Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. PDF資料下載
參數(shù)資料
| 型號(hào)： | APT20M18LVR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| 中文描述： | 電源MOS V是一個(gè)高電壓N新一代通道增強(qiáng)型功率MOSFET。 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大小： | 41K |
| 代理商： | APT20M18LVR |
Reverse Recovery Time
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/μs)
DYNAMIC CHARACTERISTICS
APT20M18 B2VFR - LVFR
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Peak Diode Recovery
dv
/
dt 6
Reverse Recovery Charge
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/μs)
Peak Recovery Current
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/μs)
Symbol
I
S
I
SM
V
SD
dv
/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
μC
Amps
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°
C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°
C
R
G
= 0.6
MIN
TYP
9910
2270
650
330
75
143
18
27
54
6
MAX
UNIT
pF
nC
ns
MIN
TYP
MAX
100
400
1.3
5
230
450
T
j
= 25
°
C
T
j
= 125
°
C
T
j
= 25
°
C
T
j
= 125
°
C
T
j
= 25
°
C
T
j
= 125
°
C
0.9
3.4
11
20
THERMAL CHARACTERISTICS
Symbol
R
JC
R
JA
MIN
TYP
MAX
0.20
40
UNIT
°
C/W
Characteristic
Junction to Case
Junction to Ambient
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
4.69 (.185)
1.49 (.059)
2.21 (.087)
0.40 (.016)
Collector
Emitter
Gate
Collector
Emitter
Gate
C
C
19.51 (.768)
19.81 (.780)
25.48 (1.003)
2.29 (.090)
0.762.79 (.110)
3.18 (.125)
3.10 (.122)
4.60 (.181)
1.80 (.071)
2.59 (.102)
0.48 (.019)
2.29 (.090)
5.79 (.228)
5.45 (.215) BSC
2-Plcs.
15.49 (.610)
5.38 (.212)
(.14.50
19.81 (.780)
20.80 (.819)
1.65 (.065)
1.01 (.040)
5.45 (.215) BSC
2-Plcs.
2.87 (.113)
TO-264 (L) Package Outline
T-MAX
(B2) Package Outline
These dimensions are equal to the TO-247 without the mounting hole.
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
5,256,583
1
Repetitive Rating: Pulse width limited by maximum T
j
2
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
4
Starting T
j
=
+25
°
C, L = 600μH, R
G
=
25 , Peak I
L
= 100A
5
The maximum current is limited by lead temperature.
6
I
S
I
D
[Cont.],
di
/
dt
= 100A/μs, V
R
=
50V,
T
j
150
°
C, R
G
= 2.0
APT Reserves the right to change, without notice, the specifications and information contained herein.
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT20M19JVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT20M20LFLL | CONN RECEPT 12POS 2MM IDT GOLD |
| APT20M20LLL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT20M20JFLL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT20M20JLL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT20M18LVRG | 功能描述:MOSFET N-CH 200V 100A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT20M19JVR | 功能描述:MOSFET N-CH 200V 112A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT20M20B2FLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT20M20B2FLL_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT20M20B2FLLG | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) T-MAX 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS7 - Rail/Tube 制造商:Microsemi 功能描述:Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) T-MAX |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。