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參數資料
| 型號： | APT20M11JFLL |
| 元件分類： | JFETs |
| 英文描述： | 176 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數： | 4/5頁 |
| 文件大小： | 171K |
| 代理商： | APT20M11JFLL |
050-7042
Rev
C
9-2004
APT20M11JFLL
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13,SOURCE-DRAINDIODEFORWARDVOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
1
5
10
50
100 200
0
10
20
30
40
50
0
50
100
150
200
250
300
0.3
0.5
0.7
0.9
1.1
1.3
1.5
TC=+25°C
TJ=+150°C
SINGLE PULSE
704
500
100
50
10
16
14
12
10
8
6
4
2
0
I
D
= 176A
30,000
10,000
1,000
100
50
10
500
100
50
10
5
1
OPERATIONHERE
LIMITEDBYRDS(ON)
Crss
Coss
Ciss
10mS
100S
1mS
VDS=100V
VDS=40V
VDS=160V
TJ=+150°C
TJ=+25°C
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 130V
R
G = 5
T
J = 125°C
L = 100H
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t rand
t
f
(ns)
V
DD = 130V
R
G = 5
T
J = 125°C
L = 100H
V
DD = 130V
I
D = 176A
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
V
DD = 130V
R
G = 5
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
30
60
90
120 150 180 210 240 270
30
60
90
120 150 180 210 240 270
30
60
90
120 150 180 210 240 270
0
5
10 15 20 25 30
35 40 45 50
160
140
120
100
80
60
40
20
0
8000
6000
4000
2000
0
300
250
200
150
100
50
0
10000
8000
6000
4000
2000
0
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相關代理商/技術參數 |
參數描述 |
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| APT20M11JLL | 功能描述:MOSFET N-CH 200V 176A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS 7® 標準包裝:10 系列:* |
| APT20M11JVFR | 功能描述:MOSFET N-CH 200V 175A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS V® 標準包裝:10 系列:* |
| APT20M11JVR | 功能描述:MOSFET N-CH 200V 175A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS V® 標準包裝:10 系列:* |
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| APT20M120JCU3 | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET DIODE 1200V SOT227 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
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