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參數(shù)資料
| 型號(hào)： | APT11058B2FLL |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 1100 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | B2, TMAX-3 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 166K |
| 代理商： | APT11058B2FLL |
050-7181
Rev
A
4-2004
APT11058B2FLL_LFLL
Crss
Ciss
Coss
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
1100
0
10
20
30
40
50
0
40
80
120
160
200
0.3
0.5
0.7
0.9
1.1
1.3
1.5
80
10
5
1
.1
16
12
8
4
0
TC=+25°C
TJ=+150°C
SINGLE PULSE
10mS
1mS
100S
TJ=+150°C
TJ=+25°C
VDS=550V
VDS=220V
VDS=880V
I
D = 20A
20,000
10,000
1,000
100
10
200
100
10
1
OPERATIONHERE
LIMITEDBYRDS(ON)
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 733V
R
G = 5
T
J = 125°C
L = 100H
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t rand
t
f
(ns)
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
0
5
10 15 20 25 30 35 40 45 50
V
DD = 733V
I
D = 20A
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
td(on)
td(off)
Eon
Eoff
120
100
80
60
40
20
0
2500
2000
1500
1000
500
0
V
DD = 733V
R
G = 5
T
J = 125°C
L = 100H
V
DD = 733V
R
G = 5
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
70
60
50
40
30
20
10
0
2500
2000
1500
1000
500
0
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| APT11058JFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT11058LFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT11F80B | 功能描述:MOSFET N-CH 800V 12A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 8™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT11F80S | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 800V 12A D3PAK |
| APT11GF120BRD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Volts:1200V VF/Vce(ON):3V ID(cont):11Amps|Fast IGBT Family |
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