- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄57944 > APT10M11B2VR 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | APT10M11B2VR |
| 元件分類： | JFETs |
| 英文描述： | 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CLIP MOUNTED TO-247, TMAX-3 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 63K |
| 代理商： | APT10M11B2VR |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (
°C)
T
J
, JUNCTION TEMPERATURE (
°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (
°C)
T
C
, CASE TEMPERATURE (
°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
0
10
20
30
40
50
0
0.5
1.0
1.5
2.0
2.5
0
2468
0
50
100
150
200
250
300
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
APT10M11B2VR
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
200
160
120
80
40
0
1.10
1.05
1.00
0.95
0.90
0.85
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
200
160
120
80
40
0
200
160
120
80
40
0
120
100
80
60
40
20
0
2.00
1.75
1.50
1.25
1.00
0.75
0.50
050-5617
Rev
C
VDS> ID (ON) x RDS (ON)MAX.
250
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=7V, 10V & 15V
6V
VGS=10 & 15V
VGS=10V
VGS=20V
TJ = +25°C
TJ = -55°C
TJ = +125°C
TJ = +25°C
TJ = -55°C
7V
5.5V
4.5V
5V
4V
6V
5.5V
4.5V
5V
4V
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT10M11JVRU3 | 142 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10M11LVR | 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT10M11LVR | 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT11058JFLL | 18 A, 1100 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT12031JFLL | 30 A, 1200 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT10M11JVFR | 功能描述:MOSFET N-CH 100V 144A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT10M11JVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10M11JVRU2 | 功能描述:MOSFET N-CH 100V 142A SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT10M11JVRU3 | 功能描述:MOSFET N-CH 100V 142A SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT10M11LVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:High Voltage N-Channel enhancement mode power MOSFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。