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參數(shù)資料
| 型號(hào)： | APT10M11B2VFRG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TMAX-3 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大小： | 66K |
| 代理商： | APT10M11B2VFRG |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
APT10M11 B2VFR - LVFR
TC =+25°C
TJ =+150°C
SINGLE PULSE
400
100
50
10
5
1
20
16
12
8
4
0
050-5629
Rev
B
11-99
OPERATION HERE
LIMITED BY RDS (ON)
Crss
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
Coss
Ciss
30,000
10,000
5,000
1,000
500
400
100
50
10
5
1
100S
10mS
100mS
DC
1mS
TJ =+150°C
TJ =+25°C
Coss
Ciss
1
5
10
50
100
.01
.1
1
10
50
0
100
200
300
400
500
0
0.4
0.8
1.2
1.6
2.0
VDS=50V
VDS=20V
VDS=80V
I
D
= 0.5 I
D
[Cont.]
Dimensions in Millimeters and (Inches)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
Emitter
Gate
Collector
Emitter
Gate
Collector
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50
(.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
2-Plcs.
TO-264 (L) Package Outline
T-MAX (B2) Package Outline
These dimensions are equal to the TO-247 without the mounting hole.
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PDF描述 |
|---|---|
| APT10M11LVFR | 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT10M13JNR | 150 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10M15JNR | 140 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10M20SFLL | 92 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10M20BFLL | 92 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT10M11B2VR | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10M11JVFR | 功能描述:MOSFET N-CH 100V 144A SOT-227 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT10M11JVR | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10M11JVRU2 | 功能描述:MOSFET N-CH 100V 142A SOT227 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT10M11JVRU3 | 功能描述:MOSFET N-CH 100V 142A SOT227 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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