參數(shù)資料
型號(hào)： APT1004RCN
廠商： Advanced Power Technology Ltd.
英文描述： N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
中文描述： ? -通道增強(qiáng)型高壓功率MOSFET
文件頁數(shù)： 1/4頁
文件大?。?/td> 50K
代理商： APT1004RCN
MAXIMUM RATINGS
All Ratings: T
C
= 25
°
C unless otherwise specified.
APT1004RGN 1000V 3.3A 4.00
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadéra Nord
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 5792 1515
FAX: (33) 5 5647 9761
APT Website - http://www.advancedpower.com
0
POWER MOS IV
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
TM
G
D
S
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25
°
C
Pulsed Drain Current
1
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25
°
C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
APT1004RGN
1000
3.3
13.2
±
30
100
0.8
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
W/
°
C
°
C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
Amps
Ohms
μ
A
nA
Volts
MIN
TYP
MAX
1000
3.3
4.00
250
1000
±
100
2
4
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
μ
A)
On State Drain Current
2
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D
[Cont.])
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
°
C)
Gate-Source Leakage Current (V
GS
=
±
30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0mA)
Symbol
BV
DSS
I
D
(ON)
R
DS
(ON)
I
DSS
I
GSS
V
GS
(TH)
SAFE OPERATING AREA CHARACTERISTICS
Symbol
SOA1
SOA2
I
LM
Characteristic
Safe Operating Area
Safe Operating Area
Inductive Current Clamped
Test Conditions
V
DS
= 0.4 V
DSS
, I
DS
= P
D
/ 0.4 V
DSS
, t = 1 Sec.
I
DS
= I
D
[Cont.], V
DS
= P
D
/ I
D
[Cont.], t = 1 Sec
.
MIN
TYP
MAX
100
100
3.3
UNIT
Watts
Amps
TO-257
相關(guān)PDF資料
PDF描述
APT1004RBN Circular Connector; No. of Contacts:16; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:20; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:20-16
APT1004RKN N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT10050B2VFR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10050B2LC Power MOS VITM is a new generation of low gate charge, high voltage
APT10050JLC Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT1004RDN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
APT1004RGN 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT1004RKN 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT10050B2LC 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage
APT10050B2VFR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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