參數(shù)資料
型號(hào): APT1002R4BN
元件分類: JFETs
英文描述: 6.5 A, 1000 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
文件頁(yè)數(shù): 3/4頁(yè)
文件大?。?/td> 50K
代理商: APT1002R4BN
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (
°C)
T
J
, JUNCTION TEMPERATURE (
°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (
°C)
T
C
, CASE TEMPERATURE (
°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
(ON),
DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
050-0009
Rev
B
-50
-25
0
25
50
75
100 125 150
1.4
1.2
1.0
0.8
0.6
0.4
DS
D
DS
V
> I (ON) x R
(ON)MAX.
230
SEC. PULSE TEST
2.5
0
2
4
68
8
16
12
20
0.7
0.9
0.8
1.0
1.1
1.2
0
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
25
50
75
100
125
150
0.0
2.5
2.0
1.5
1.0
0.5
200
300
400
500
100
0
2.0
1.5
1.0
0.5
0.0
4V
2
4
6
8
2
4
8
6
4
0
12
16
J
T =+125
°C
T =+25
°C
J
T =-55
°C
J
T =-55
°C
J
T =+25
°C
J
T =+125
°C
GS
V
=20V
V
=10V
GS
8
4.5V
5V
V
=10V
GS
5.5V
6V
2
4
6
8
10
12
4.5V
4V
V
=5.5, 6 & 10V
GS
5V
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
T
J
= 25
°C
2
SEC. PULSE TEST
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
0
2
4
6
8
APT1002R4BN
APT1002RBN
APT1002R/1002R4BN
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