參數(shù)資料
型號: APT10026JN
元件分類: JFETs
英文描述: 33 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ISOTOP-4
文件頁數(shù): 3/4頁
文件大小: 63K
代理商: APT10026JN
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (
°C)
T
J
, JUNCTION TEMPERATURE (
°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (
°C)
T
C
, CASE TEMPERATURE (
°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
(ON),
DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
0
100
200
300
400
500
0
5
10
15
20
25
30
0
2
4
6
8
10
0
20
40
60
80
160
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
APT10026JN
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
80
60
40
20
0
100
80
60
40
20
0
35
30
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
0
3.0
2.5
2.0
1.5
1.0
0.5
1.2
1.1
1.0
0.9
0.8
0.7
1.4
1.2
1.0
0.8
0.6
0.4
TJ = 25°C
250
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
TJ = +125°C
TJ = +25°C
VGS=6, 8, 10, 15V
4.5V
4V
5V
5.5V
4V
5V
4.5V
5.5V
VGS=6, 8, 10, 15V
TJ = +25°C
TJ = +125°C
TJ = -55°C
VGS=20V
VGS=10V
VDS> ID (ON) x RDS (ON)MAX.
250
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55°C
050-0038
Rev
F
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