參數(shù)資料
型號： APT1001R6BN
廠商： Advanced Power Technology Ltd.
元件分類： 圓形連接器
英文描述： Circular Connector; No. of Contacts:56; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
中文描述： N溝道增強型高壓功率MOSFET
文件頁數(shù)： 4/4頁
文件大?。?/td> 50K
代理商： APT1001R6BN
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
G
,
I
D
,
I
D
,
C
TO-247AD Package Outline
0
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
Gate
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2-Plcs.
3.55 (.140)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Dimensions in Millimeters and (Inches)
D
0
8
4
12
16
20
20
2
1
5
10
10
100
1,000
10,000
100
50
0
.5
1.0
1.5
2.0
10
30
50
0
40
20
TJ
°
C
J
°
C
Crss
iss
C
oss
C
VDS
0
20
40
60
80
100
VDS
VDS
I
D
= I
D
[Cont.]
APT1001R6BN
C
°
C
J
°
C
SINGLE PULSE
40
1
5
10
50 100 1000
1
10
APT1001R6BN
10
μ
S
100
μ
S
1mS
10mS
100mS
DC
OPERATION HERE
LIMITED BY RDS
.1
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APT10025JVR Circular Connector; No. of Contacts:61; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT1001R6SFLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R FREDFET
APT1001R6SFLLG 功能描述:MOSFET N-CH 1000V 8A D3PAK RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
APT1001RAN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
APT1001RBLC 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
APT1001RBN 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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