參數(shù)資料
型號(hào)： APL502J
元件分類： JFETs
英文描述： 52 A, 500 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOTOP-4
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 74K
代理商： APL502J
DYNAMIC CHARACTERISTICS
APL502J
050-5897
Rev
B
8-2003
Symbol
C
iss
C
oss
C
rss
t
d
(on)
t
r
t
d
(off)
t
f
MIN
TYP
MAX
7600
9000
1280
1810
620
930
13
26
24
48
58
87
14
17
UNIT
pF
ns
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= 52A @ 25°C
R
G
= 0.6
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
THERMAL CHARACTERISTICS
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
Symbol
RθJC
RθJA
VIsolation
Torque
MIN
TYP
MAX
.22
40
2500
10
UNIT
°C/W
Volts
lbin
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 2.22mH, RG = 25, Peak IL = 52A
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULARPULSEDURATION(SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
Z
Θ
JC
,THERMAL
IMPEDANCE
(°C/W)
SINGLE PULSE
FIGURE 1a, TRANSIENT THERMAL IMPEDANCE MODEL
0.0520
0.155
0.0126
0.0261F
0.423F
67.451F
Power
(Watts)
Junction
temp. ( ”C)
RC MODEL
Case temperature
相關(guān)PDF資料
PDF描述
APL602L 49 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
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APL602L 49 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APL602B2 49 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
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