參數(shù)資料
型號: APL501J
廠商: Advanced Power Technology Ltd.
英文描述: N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
中文描述: N溝道增強型高壓功率MOSFET
文件頁數(shù): 2/4頁
文件大?。?/td> 114K
代理商: APL501J
DYNAMIC CHARACTERISTICS
APL501J
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
10
-5
10
-4
10
-3
RECTANGULAR PULSE DURATION (SECONDS)
10
-2
10
-1
1.0
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
Z
q
J
,
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D=0.5
SAFE OPERATING AREA CHARACTERISTICS
Test Conditions / Part Number
V
DS
= 400 V, I
DS
= 0.813A, t = 20 sec., T
C
= 60°C
Watts
0
Symbol
C
iss
C
oss
C
rss
t
d
(on)
t
r
t
d
(off)
t
f
MIN
TYP
MAX
6040
1220
510
13
20
54
11
7300
1710
770
26
40
81
20
UNIT
pF
ns
Symbol
SOA1
MIN
TYP
MAX
325
UNIT
Characteristic
Safe Operating Area
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 0.6
W
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
I
D
,
I
D
,
80
60
40
20
0
80
60
40
20
0
0
20
40
60
80
100
0
4
8
12
16
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
8 V
6 V
7 V
VGS=9V, 10V, 12V, 14 & 16V
5 V
8 V
6 V
7 V
5 V
9 V
VGS=10, 12, 14 & 16V
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