參數(shù)資料
型號(hào)： APL1001J
廠(chǎng)商： Advanced Power Technology Ltd.
英文描述： N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
中文描述： N溝道增強(qiáng)型高壓功率MOSFET
文件頁(yè)數(shù)： 2/2頁(yè)
文件大小： 37K
代理商： APL1001J
10
-5
10
-4
10
-3
RECTANGULAR PULSE DURATION (SECONDS)
10
-2
10
-1
1.0
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
Z
J
,
°
C
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D=0.5
31.5 (1.240)
7.8 (.307)
8.2 (.322)
Dimensions in Millimeters and (Inches)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
Hex Nut M4
0.75 (.030)
12.6 (.496)
25.2 (0.992)
1.95 (.077)
* Source
Drain
Gate
*
r = 4.0 (.157)
4.0 (.157)
4.2 (.165)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
(4 places)
3.3 (.129)
* Source
Source terminals are shorted
capability is equal for either
0
DYNAMIC CHARACTERISTICS
APL1001J
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
SAFE OPERATING AREA CHARACTERISTICS
Test Conditions / Part Number
V
DS
= 400 V, I
DS
= 0.813A, t = 20 sec., T
C
= 60
°
C
Symbol
C
iss
C
oss
C
rss
t
d
(on)
t
r
t
d
(off)
t
f
MIN
TYP
MAX
6100
780
285
14
14
60
14
UNIT
pF
ns
Symbol
SOA1
MIN
TYP
MAX
300
375
UNIT
Characteristic
Safe Operating Area
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°
C
R
G
= 0.6
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Watts
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
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