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參數(shù)資料
| 型號(hào)： | AP99T03GP-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 120 A, 30 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 94K |
| 代理商： | AP99T03GP-HF |
AP99T03GP-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
0
2
4
6
8
10
0
40
80
120
160
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS =15 V
V DS =18 V
V DS =24 V
I D =30 A
td(on) tr
td(off) tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS
QGD
QG
Charge
0
2000
4000
6000
8000
1
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
1
10
100
1000
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
Operation in this area
limited by RDS(ON)
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