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參數資料
| 型號： | AP9997GK |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 3.2 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT PACKAGE-4 |
| 文件頁數： | 3/4頁 |
| 文件大?。?/td> | 94K |
| 代理商： | AP9997GK |
AP9997GK
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
4
8
12
16
20
012
345
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
0
4
8
12
16
20
02
46
8
10
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =150
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
0.4
0.8
1.2
1.6
2.0
2.4
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =3 A
V G =10V
80
90
100
110
120
130
140
24
68
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =2 A
T A =25
o C
0
2
4
6
8
10
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
I
S
(A
)
T j =25
o C
T j =150
o C
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
0
50
100
150
T j ,Junction Temperature (
o C)
V
GS(t
h)
(V
)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AP9997GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GP | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9997GP-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9998GH-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9998GI-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic |
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