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參數(shù)資料
| 型號(hào)： | AP9962M |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強(qiáng)型功率MOSFET |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 75K |
| 代理商： | AP9962M |
AP9962M
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
15
20
25
30
35
3
4
5
6
7
8
9
10
11
V
GS
(V)
R
D
Ω
)
I
D
=7A
T
C
=25
o
C
0
5
10
15
20
25
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
I
D
T
C
=150
o
C
8.0V
5.0V
V
G
=3.0V
10V
4.0V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
D
I
D
=7A
VG=10V
0
5
10
15
20
25
0
1
V
DS
, Drain-to-Source Voltage (V)
2
3
4
5
6
I
D
T
C
=25
o
C
10V
8.0V
5.0V
4.0V
V
G
=3.0V
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-50
0
50
100
150
Junction Temperature (
o
C )
V
G
0.01
0.1
1
10
100
0
0.4
0.8
1.2
1.6
V
SD
(V)
I
S
(
T
j
=25
o
C
T
j
=150
o
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9963AGP-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9963AGS-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9963GI-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9963GP-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9963GS-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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