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參數(shù)資料
| 型號(hào)： | AP9932GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.04 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SOP-8 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 96K |
| 代理商： | AP9932GM |
N-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
AP9932GM
0
3
6
9
12
15
18
21
012
34
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
V G =2.5V
10V
7.0V
5.0V
4.5V
0
3
6
9
12
15
18
21
01
23
4
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A = 150
o C
10V
7.0V
5.0V
4.5V
V G =2.5V
30
35
40
45
50
55
60
024
68
10
V GS , Gate-to-Source Voltage (V)
R
DS
(ON)
(m
ΩΩΩΩ
)
I D =2 A
T A =25
o C
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rm
aliz
ed
R
DS
(ON)
I D =4A
V G =4.5V
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
I
S
(A
)
T j =25
o C
T j =150
o C
0.0
0.5
1.0
1.5
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rm
aliz
ed
V
GS
(t
h
)(V
)
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