參數(shù)資料
型號(hào)： AP9685M
廠商： Electronic Theatre Controls, Inc.
英文描述： N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述： N溝道增強(qiáng)型功率MOSFET
文件頁(yè)數(shù)： 3/4頁(yè)
文件大?。?/td> 72K
代理商： AP9685M
AP9685M
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
0
10
20
30
40
50
60
70
0.0
2.0
4.0
6.0
8.0
10.0
V
DS
, Drain-to-Source Voltage (V)
I
D
T
A
=25
o
C
10V
6.0V
5.0V
4.5V
V
G
=3.0V
0
10
20
30
40
50
0
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
I
D
T
A
=150
o
C
V
G
=3.0V
10V
6.0V
5.0V
4.5V
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(
T
j
=25
o
C
T
j
=150
o
C
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
D
I
D
=5.3A
V
G
=10V
0.5
1
1.5
2
2.5
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
V
G
35.00
37.50
40.00
42.50
45.00
47.50
2
4
6
8
10
12
V
GS
, Gate-to-Source Voltage (V)
R
D
Ω
)
I
D
=5A
T
A
=25
℃
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